The main area of research of the laboratory is the study of the electrical properties of semiconductor structures and devices. Our Laboratory studies the charge transfer processes in silicon-based nanoscale heterostructures with the presence of electronic states in nanocrystals. The Laboratory also conducts a study of the features of charge carrier transport in diode and transistor structures, based on organic semiconductors. Finally, Laboratory resources allow low-current measurement, as well as measurement of charging and recharging processes of the properties of high-current devices.

Nanoscale multilayer structures based on silicon were created as a result of our studies.

The Laboratory is a part of the Analytical Technology Innovation Center “High technologies and new materials” of NSU.

Head of Lab – Candidate of Physico-Mathematical Sciences, Sophia Arjanikova, nsm@nsm.nsu.ru

Semiconductor Physics Section NSU
Rzhanov Institute of Semiconductor Physics, Siberian Branch of the Russian Academy of Sciences