The main area of research of the laboratory is the study of the electrical properties of semiconductor structures and devices. Our Laboratory studies the charge transfer processes in silicon-based nanoscale heterostructures with the presence of electronic states in nanocrystals. The Laboratory also conducts a study of the features of charge carrier transport in diode and transistor structures, based on organic semiconductors. Finally, Laboratory resources allow low-current measurement, as well as measurement of charging and recharging processes of the properties of high-current devices.
Nanoscale multilayer structures based on silicon were created as a result of our studies.
The Laboratory is a part of the Analytical Technology Innovation Center “High technologies and new materials” of NSU.
Head of Lab – Candidate of Physico-Mathematical Sciences, Sophia Arjanikova,
nsm@nsm.nsu.ru
Semiconductor Physics Section NSU
Rzhanov Institute of Semiconductor Physics, Siberian Branch of the Russian Academy of Sciences 