The Lab focuses research on solving experimental problems by the spectral characterization of materials in the frequency range from 50 GHz to several tens of THz using BWO technology and Fourier transform spectroscopy. A key focus of the laboratory is the development of high-performance microstructural quasi-optical components for controlling the amplitude, phase and polarization characteristics of beams of submillimeter of terahertz radiation.

Produced by different methods such as lithography, galvanoplasty and laser micromachining, components are executed on the basis of multi-layer frequency selective surfaces - thin planar metallic subwave length microstructures of specific geometric shape, whose topology determines the selective characteristics of the component. This approach allows creating quasi-optical structures with unique electrodynamic properties and optimal weight and dimensional parameters, unrealizable or hardly realizable within the frame of classical optics in infrared and visible ranges.

Laboratory researchers developed unique quasi-optical selective components on the basis of subwave-length microstructures in order to control beam radiation in the frequency range from 50 GHz to 3 THz. Components include band-pass filters, phase and polarization converters, planar focusers, resonant absorbers and bolometric detectors on their basis. In some cases, developed devices surpass their foreign counterparts in their functional characteristics. The developed components are integrated with the radiometric systems of the Institute of Nuclear Physics and the Technological Design Institute of Applied Microelectronics of the SB RAS, where are conducted experiments with electromagnetic radiation at submillimeter and terahertz ranges.

The Laboratory takes part in the Analytical Technology Innovation Center “High technologies and new materials” of NSU.

Head of Lab – Sergey Kuznetsov,

Department of Physics NSU
Budker Institute of Nuclear Physics, Siberian Branch of the Russian Academy of Sciences
Technological Design Institute of Applied Microelectronics, Siberian Branch of the Russian Academy of Sciences