The laboratory participates in the development and improvement of synthesis methods for the  new nanostructured, film and 3D-materials, researches their microstructural, optic and electronic properties as well as the design of functional devices on their basis. University’s experimental equipment is used to complete the projects. The projects the laboratory participates in are completed through inter-institution and international cooperation. The physical characteristics of semiconductor and dielectric materials obtained in the Laboratory help to identify the perspective areas for their application in microelectronics, photonics and laser technologies. In particular, non-linear crystals have been grown and researched to transform laser emission in vacuum ultraviolet (VUV) and IR regions as well as scintillating and semiconductor crystals for the detection of neutron radiation.

The methods of obtaining different materials developed at the laboratory and their experimental study are accompanied by the development of theoretical models and design of calculation algorithms. It allows the researchers to assess the physical properties of multicomponent crystals rather accurately.

The Laboratory conducts research in the following areas:

  •  Oxide compounds crystal growth which contain the ions of Eu3+, Eu2+, Sm3+, Tb3+, Pr3+ and Dy3+;
  • Physical basis for resistive (memristor) memory; 
  •  Production of micro- and nanostructures and the study of their resonance interaction with electromagnetic radiation; 
  •  The study of properties of functional graphene;
  •  The development and production of effective typologies of two-dimensional silicon-based photonic crystals.

The Laboratory has been established on the basis of the University’s Semiconductor Physics Section. It carries out joint research studies with the Institute of Semiconductors (Siberian Branch of the Russian Academy of Sciences).

The Laboratory works in collaboration with the following organizations:

  •  The Institute of Monitoring of Climatic and Ecological Systems (IMCES SB RAS, Tomsk)
  •  Physics Institute (Siberian Branch of the Russian Academy of Sciences, Krasnoyarsk) 
  •  The Institute of Chemistry and Chemical Technology (Krasnoyarsk)
  •  Irkutsk Chemistry Institute (SB RAS, Irkutsk)
  •  Institute of Energy and Climate Research, Julich, Germany
  •  Universität Bremen, Bremen, Germany
  •  Institute für Kristallographie, Aachen, Germany
  •  Technical Institute of Physics and Chemistry, Beijing, China
  •  University of Science and Technology Beijing, Beijing, China
  •  China University of Geosciences, Beijing, China
  •  Graduate School of the Chinese Academy of Sciences, Beijing, China
  •  General Research Institute for Nonferrous Metals, Beijing, China 
  •  Hanseo University, Seosan, Republic of Korea
  •  The University of Tokyo, Japan
  •  Osaka University, Japan
  •  Research Institute of Electrical Communication, Tohoku University, Sendai, Japan
  •  National Institute of Advanced Industrial Science and Technology, Tsukuba, Japan
  •  National Chiao Tung University, Hsinchu, Taiwan
  •  Gazi University, Ankara, Turkey

Research area expert: Alexander Andreevich Shklyaev (Doctor of Science, Physics and Mathematics), alexsan@mail.ru

Semiconductor Physics Section (Siberian Branch of the Russian Academy of Sciences)

Semiconductor Physics Institute (Siberian Branch of the Russian Academy of Sciences) 

Neorganic Chemistry Instite (Siberian Branch of the Russian Academy of Sciences)

Institute of Geology and Minerology (Siberian Branch of the Russian Academy of Sciences)

Budker Institute of Nuclear Physics (Siberian Branch of the Russian Academy of Sciences

Boreskov Institute of Catalysis (Siberian Branch of the Russian Academy of Sciences)

Insitute of Automatics and Electrometry (Siberian Branch of the Russian Academy of Sciences)